Title of article :
Synthesis and Field-Emission Properties of Ga2O3-C Nanocables
Author/Authors :
Hu، Junqing نويسنده , , Zhan، Jinhua نويسنده , , Bando، Yoshio نويسنده , , Golberg، Dmitri نويسنده , , Li، Yubao نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2004
Pages :
-5157
From page :
5158
To page :
0
Abstract :
Uniform Ga2O3-C nanocables with an average core diameter of 40 nm, wall thickness of 6 nm, and lengths of up to dozens of (mu)m were generated via co-thermal evaporation of gallium oxide and activated carbon powder. The nanocable formation is discussed based on thermodynamics and crystallography. Gallium oxide and carbon generate gaseous Ga2O and CO at a higher temperature; they then recombine to form Ga2O3 and C. The simultaneous generation of Ga2O3 and C ensures continuous uniform coatings of carbon on gallium oxide nanowires. Field-emission measurements indicated that the nanocables exhibited an unusual sharp increase in emission current density near the threshold field.
Journal title :
CHEMISTRY OF MATERIALS
Serial Year :
2004
Journal title :
CHEMISTRY OF MATERIALS
Record number :
115611
Link To Document :
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