Title of article
Chemical Effects in Organic Electronics
Author/Authors
Janata، Jiri نويسنده , , Chen، Hang نويسنده , , Josowicz، Mira نويسنده , , Potje-Kamloth، Karin نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2004
Pages
-4727
From page
4728
To page
0
Abstract
Effects of the chemical environment on devices utilizing organic semiconductors are discussed. It is convenient and justified to use silicon-based insulated gate fieldeffect transistors (IGFET) as the yardstick by which the performance of organic field-effect transistors (OFET) are measured. However, the same issues may apply to other types of devices utilizing organic semiconductors (OS). The focus of this article is on chemical modulation of the critical parts of these devices, specifically on the bulk electronic properties, contacts between the metal and OS, and interface between the OS and the insulating support. Controlled interactions between the chemical environment and the solid-state devices have been well documented and utilized in chemical sensors. On the other hand, uncontrolled chemical interactions with a solid-state device may lead to experimental artifacts in electronics that is intended for signal and information processing.
Keywords
atmospheric VOC , inhibition of S(IV) autoxidation , isoprene , isoprene oxidation , Sulphur dioxide
Journal title
CHEMISTRY OF MATERIALS
Serial Year
2004
Journal title
CHEMISTRY OF MATERIALS
Record number
115675
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