Molecular beam epitaxy growth of GaN, AlN and InN

III-Nitrides receive much research attention and obtain significant development due to their wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field-effect transistors and so on. Among the methods for III-nitrides growth, molecular beam epitaxy provides its advantage in precise control of growth parameters, deep understanding of every growth step and in situ control of the growth. In this paper, we will summarize recent progress of the growth of III-nitrides, discuss the growth behavior, illustrate the effect of in situ monitoring on growth, demonstrate the effect of polarity on III-nitrides and introduce the doping, alloys and quantum structures of III-nitrides.