Advances in the structural characterisation of semiconductor crystals by X-ray scattering methods

Over the last 10 years there has been considerable progress in the analysis of semiconductors by X-ray scattering. This progression is because of the new material challenges requiring more sophisticated methodologies, and the availability of X-ray optics, improvements in diffractometry and theory and the wider use of synchrotrons. Most structural features modify the scattering of X-rays, from layer thickness and composition to interface roughness and defects. The increased intensity of laboratory sources and the use of synchrotrons have led to many innovative analysis methods, for example those for quantum dots and lattice distortions. X-ray scattering has also become a much more accessible technique, with easier to use instrumentation and many procedures suitable for rapid analysis. The crossfertilisation between the synchrotron facilities (with its advantages of very high intensity) and laboratory-based equipment (with its advantages of convenience) has lead to many advances in detailed characterisation. This review will give a flavour of these activities and where some of the latest developments may be of interest to the semiconductor scientist.