Title of article :
Characteristics of a silicon pressure sensor in superfluid helium pressurized up to 1.5 MPa Original Research Article
Author/Authors :
M. Maeda، نويسنده , , A. Sato، نويسنده , , M. Yuyama، نويسنده , , M. Kosuge، نويسنده , , F. Matsumoto، نويسنده , , H. Nagai، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
217
To page :
222
Abstract :
It is known that a piezo-resistive pressure sensor, FPS-51B manufactured by Fujikura Ltd., is available for in situ pressure measurement in superfluid helium. The sensor covers a pressure range of zero to 103.4 kPa. The maximum rated pressure is 202.6 kPa at room temperature. The characteristics of the pressure sensor in a pressure range up to approximately 0.2 MPa were reported in detail for use in superfluid helium. We measured the pressure characteristics of this sensor up to 1.5 MPa to determine its availability to be used under much higher pressure. Measurements were taken using a cryostat, which can be pressurized up to 1.5 MPa at room temperature and superfluid helium temperatures. It was found that the sensor could be used in a superfluid helium environment at pressures up to 1.5 MPa, without any damage and with good reproducibility.
Keywords :
Piezo-resistive silicon , Pressurized He II , Pressure sensor , Superfluid
Journal title :
Cryogenics
Serial Year :
2004
Journal title :
Cryogenics
Record number :
1172424
Link To Document :
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