Title of article
Joining of AlN ceramic to metals using sputtered Al or Ti film
Author/Authors
Sheng Zhu، نويسنده , , Wladyslaw Wlosinski، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
277
To page
282
Abstract
A process was developed to improve the joining of aluminum nitride (AlN) ceramic and metals. Radio frequency sputtering was first applied to deposit surface modification aluminum or titanium film on AlN ceramic. Then brazing and diffusion bonding processes were investigated to join the different surface modified AlN ceramics to Cu and FeNi42 metals. The strength of the joints was improved because the interfacial sputtering film improved the wettability of AlN. Based on the results of the microstructure and chemical interactions studies and residual stresses calculations, it is believed that the joining ability of AlN ceramic to metals can be improved further with a functionally gradient material interlayer.
Keywords
Aluminum film , Titanium film , Aluminum nitride , Gradient material
Journal title
Journal of Materials Processing Technology
Serial Year
2001
Journal title
Journal of Materials Processing Technology
Record number
1175864
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