Title of article
Bonding of CVD diamond thick films using an Ag–Cu–Ti brazing alloy
Author/Authors
Fenglian Sun، نويسنده , , Jicai Feng، نويسنده , , Dan Li، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
333
To page
337
Abstract
The bonding of chemical vapor deposition (CVD) thick films diamond was performed by an active metal brazing technique. A brazing filler metal 92 (72Ag–28Cu)–8Ti alloy was used under controlled temperature and time.
In this paper, the influence of the main bonding condition — peak heating temperature — was investigated. The mechanism of reaction between the Ag–Cu–Ti brazing filler metal and the diamond was analyzed using XRD, SEM and EDX in order to optimize the mechanical properties of the interfaces. It is found that a new reaction product; TiC, exists at the interface of the diamond and the brazing filler metal. In some regions, both the diamond and the brazing filler metal were split under shear force, the fracture surface cutting through the sections of both the diamond and the brazing filler metal. It can be considered that metallurgical bonding was formed at the interface of the diamond and the brazing filler metal.
Keywords
Ag–Cu–Ti alloy , Bonding , Diamond thick film
Journal title
Journal of Materials Processing Technology
Serial Year
2001
Journal title
Journal of Materials Processing Technology
Record number
1176227
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