Title of article :
Mechanical fatigue of polysilicon: Effects of mean stress and stress amplitude
Author/Authors :
Chen، L. نويسنده , , Kahn، Brian H. نويسنده , , Ballarini، R. نويسنده , , Heuer، A.H. نويسنده ,
Pages :
-666
From page :
667
To page :
0
Abstract :
Polycrystalline silicon (polysilicon) fatigue specimens with micrometer-sized dimensions were fabricated and subjected to cyclic loading using an integrated electrostatic actuator. The fatigue effects were determined by comparing the single edge-notched beam monotonic bend strength measured after cyclic loading to the monotonic strength of "virgin" specimens that had received no cycling. Both strengthening and weakening were observed, depending on the levels of mean stress and fatigue stress amplitude during the cyclic loading. Monotonic loading with similar sub-critical stress levels had no effect. The physical mechanisms responsible for this behavior are discussed, and a model based on grain boundary plasticity is presented for the strengthening behavior.
Keywords :
fracture , Semiconductor , Fatigue , Micromechanical modeling
Journal title :
Astroparticle Physics
Record number :
117695
Link To Document :
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