Title of article
Reaction of C–C composites with WSi2 and its effect on thermal conductivity
Author/Authors
Osamu Yamamoto، نويسنده , , Kazuyuki Sugano، نويسنده , , Tadashi Sasamoto، نويسنده , , Toshiaki Sogabe، نويسنده , , Naoto Ohta، نويسنده , , Michio Inagaki، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
9
From page
197
To page
205
Abstract
Interface reaction between C–C composites and compressed WSi2, and the thermal conductivity of the composites after the reaction with WSi2 were studied. Upon reaction with WSi2, a concentration gradient of SiC was formed along depth from the surface of C–C composites. The formation of SiC was found to occur at the matrix portion in C–C composites. WC was detected at only contacted surface between composite and WSi2. Thermal conductivity decreased with increasing temperature, irrespective of composites with and without heat treatment. In the composite reacted with WSi2 at 1450 °C for 1 h, the thermal conductivity at 273 K was found to be larger than in original composite.
Keywords
Tungsten silicide , Reaction , Thermal conductivity , C–C composite
Journal title
Journal of Materials Processing Technology
Serial Year
2003
Journal title
Journal of Materials Processing Technology
Record number
1177378
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