Title of article :
The influence of Si–O–Zr bonds on the crystal-growth inhibition of zirconia prepared by the glycothermal method
Author/Authors :
Sirarat Kongwudthiti، نويسنده , , Piyasan Praserthdam، نويسنده , , Waraporn Tanakulrungsank، نويسنده , , Masashi Inoue، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
SiO2-modified ZrO2 with the Si/Zr ratios of 0.04, 0.08, and 0.15 were prepared by the reaction of zirconium n-propoxide and tetraethyl orthosilicate in 1,4-butanediol. The products were characterized by FT-IR and XRD. The FT-IR spectra exhibit the presence of Si–O–Zr bonds formed during the reaction, indicating a high degree of powder homogeneity. The presence of Si–O–Zr bonds retards the crystal growth upon calcination.
Keywords :
SiO2-modified ZrO2 , FT-IR , Crystal growth , Glycothermal method , Si–O–Zr bonds , Si–O–Si bonds
Journal title :
Journal of Materials Processing Technology
Journal title :
Journal of Materials Processing Technology