Title of article
Preparation of indium tin oxide (ITO) with a single-phase structure
Author/Authors
Sanchuan Tang، نويسنده , , Jisheng Yao، نويسنده , , Jian Chen، نويسنده , , Jianguo Luo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
82
To page
85
Abstract
A thin film of indium tin oxide (ITO) exhibits both high transmittance in the visible region and high electrical conductivity, being used widely in opto-electronic applications. Studies were conducted on the preparation of ITO with a single-phase structure. A new process was developed on the basis of precipitation from a homogenous solution. Experiments show that a proper precursor is the key to obtain ITO with a single-phase structure, and the presence of organic additive has a great influence on the mechanism of precipitation and the structure of the precursor. ITO from this process can be used in the manufacturing of an ITO target for sputtering.
Keywords
Single phase , Sputtering , ITO
Journal title
Journal of Materials Processing Technology
Serial Year
2003
Journal title
Journal of Materials Processing Technology
Record number
1177494
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