Study of electrical discharge machining technology for slicing silicon ingots

Silicon slicing technology is an undergoing process and its performance improvements meet the ever-challenging and versatile demands. A new attempt to apply the WEDM strategy to slice the semiconductor materials is studied. The barriers from unusual material characteristics are to be conquered to make this idea realizable. The existing WEDM technology is utilized to slice the heavy-doped silicon ingot and its feasibility is examined. The machining rate and surface roughness are measured under various current on times and servo voltages in both the water immersed and water flushing WEDM machines. If small current on time is collocated with proper off time and lower gap voltage sensitivity under automatic feed mode, the stable area machining rate of around 76 mm2/min can be attained, and the Ra value is 3.6 μm or so which is acceptable if the following polishing procedure is considered. The thickness of defects to be polished can be predicted from the SEM photographs of the cross-sections of the sliced wafers. If the wire diameter is 0.25 mm and the wafer thickness is 1 mm, the portion of material loss including the kerf and the amount to be polished is under 26%.