Title of article :
DC conductivity of GeSeAg glasses at room temperature
Author/Authors :
M. Mirandou، نويسنده , , M. Fontana، نويسنده , , B. Arcondo and H. Sirkin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
420
To page :
424
Abstract :
Ionic conducting glasses are used as electrolytes in electrochemical applications (microbatteries, sensors, etc.). An interesting superionic amorphous alloy is Ge–Se–Ag where the conducting species is the Ag+ ion. This system is a good glass forming material which does not need high cooling velocities in a wide concentration range in the Se-rich corner. A maximum Ag content of 30 at.% could be introduced into a Se-rich sample with the composition GeSe3 while still retaining the vitreous character. X-ray scattering curves are characterised by a first scattering peak (FSP) located at q≈1 Å−1 which corresponds to an intermediate range order [J. Non-Cryst. Solids 273 (2000) 30]. The fundamental structural unit of the glass is the GeSe4/2 tetrahedra. In this work, we study the electric behaviour of the amorphous GeSeAg system. Glasses of the (GeSe3)100−xAgx system were prepared in the composition range from x=0 to 25 at.%. The electrical characterisation was performed using AC voltages with frequencies ranging from 100 Hz to 100 KHz. The conductivity (σ≈10−4 Ω−1 cm−1 for x=25 at room temperature) shows a monotonous decrease with decreasing Ag concentration. We discuss the relation between the glass structure and their electrical properties.
Keywords :
Chalcogenides , dc conductivity , Ionic conductors , GeSeAg
Journal title :
Journal of Materials Processing Technology
Serial Year :
2003
Journal title :
Journal of Materials Processing Technology
Record number :
1178089
Link To Document :
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