A model of the trapping media in microFLASH® memory cells

A computer model for the dielectric trapping layer in the microFLASH® memory transistor is developed. Molecular dynamics method was used to design a cluster of atoms with dielectric properties and to perform computer simulation of the redistribution of the injected charges in the program/erase processes. The charge distributions obtained on the basis of proposed model are strongly influenced by Coulomb repulsion between the trapped charge carriers. This effect leads to non-Gaussian discrete space distribution of trapped charges and significantly influences the endurance of the memory device.