Diffusion bonding of Ti/graphite and Ti/diamond by hot isostatic pressing method

At first in the beginning it was easy to spread with a diamond mutually and I assumed that the diffusion layer was provided as reaction of diffusion joining and selected Ti. I formed a diffusion couple after having processed pressurization by cold isostatic pressure (CIP) method using plate of Ti and C (graphite) in order to estimate Ti and suitable temperature in the diffusion joining with a diamond, joining time and, by reaction between the solids which I used hot isostatic pressure (HIP) method for, generated TiC and analyzed the generation layer and reactivity and demanded the diffusion coefficient that it was necessary to measure generation speed of Ti/C joining. I did a Ti/diamond with a diffusion couple after having processed pressurization by CIP method plate of Ti and diamond after having made a condition. I spread, and to join clear and joined it by HIP method and evaluated diffusion mechanism and joining strength. As a result of analysis after HIP processing, TiC was generated in Ti and a contact interface of a diamond. Results of the measurement of bonding strength using a tensile test showed that the tensile strength was 165.8 MPa under HIP processing of 973 K and holding time of 10.8 ks.