Doping effect of M (M = Nb, Ce, Nd, Dy, Sm, Ag, and/or Na) on the growth of pulsed-laser deposited V2O5 thin films

V2O5 thin films were prepared by using a pulsed-laser deposition technique. We investigate the doping effect of elements such as Nb, Ce, Nd, Dy, Sm, Ag, and/or Na, on the growth of V2O5 films. X-ray photoelectron spectroscopy results indicate that the oxidation state of vanadium is almost highest. X-ray diffraction study reveals that the doping of Nb urges to crystallize the V2O5 films. The Raman measurement shows that the doping of rare earth elements leads to the shift from 146 to 149 cm−1 about –O–V–O–O–V– bond and from 995 to 998 cm−1 about Vdouble bond; length as m-dashO double bond. The optical measurement study reveals that the doping effect on the Vdouble bond; length as m-dashO double bond is classified into two types. The addition of Nb, Ce, Nd, Sm, and/or Dy results in an increase of band gap, while those of Ag, and/or Na decreases a band gap. The electrochromic parameters of V2O5 films doped with Nb, and/or Na are superior to that of other elements as an electrochromic device (ECD).