Impurity removal and overall rate constant during low pressure treatment of liquid silicon

The research presented analyzes the effect of low pressure on the amount and reduction of impurity elements in upgraded metallurgical grade silicon. The achieved pressure was 5 kPa in the commercial electro-resistance furnace in the magnesia and mullite refractory material. The chemical composition was determined by ICP-MS method. Elements such as Al, Fe, Mn, Cu or Zn had the highest evaporation rates where higher evaporation was achieved at higher melt temperatures. The overall rate constant was deduced for four melt temperatures indicating high values even for low melt temperatures. The interfacial boundary between Si and mullite refractory showed no dissolution of Al into the liquid Si.