Title of article
Detection Properties and Radiation Damage Effects in SiC Diodes Irradiated with Light Ions Original Research Article
Author/Authors
G. Raciti، نويسنده , , M. De Napoli، نويسنده , , F. Giacoppo، نويسنده , , E. Rapisarda، نويسنده , , C. Sfienti، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2010
Pages
4
From page
784
To page
787
Abstract
The detection properties of SiC diodes of different dopant concentration irradiated with light ions are investigated. Moreover, the radiation damage, produced by irradiating SiC diodes with 16O ions at 35.2 MeV, is evaluated from the degradation of the signal pulse-height as a function of the ions fluence.
Journal title
Nuclear physics A
Serial Year
2010
Journal title
Nuclear physics A
Record number
1205909
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