Title of article
Spin-Hall effect of collimated electrons in zinc-blende semiconductors Original Research Article
Author/Authors
T. Fujita، نويسنده , , M.B.A. Jalil، نويسنده , , S.G. Tan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
13
From page
2265
To page
2277
Abstract
We describe an intrinsic spin-Hall effect (SHE) in n-type bulk zinc-blende semiconductors with a topological origin. When a collimated flux of electrons is injected into a zinc-blende semiconductor with Dresselhaus spin–orbit interaction, a nontrivial gauge structure appears in the momentum image space of the electrons. The Berry curvature of this gauge field and the corresponding Lorentz force in image-space results in a finite SHE. The value of the spin-Hall current is found to be highly dependent on the degree of electron collimation, which may be varied by means of gate electrodes. Therefore, the system may potentially be useful as an electronically controllable source of pure spin-current for spintronic applications.
Keywords
Spin transport , Spin-Hall effect , Berry curvature
Journal title
Annals of Physics
Serial Year
2009
Journal title
Annals of Physics
Record number
1206257
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