Characterization of ZnO films prepared by reactive sputtering at different oxygen pressures

The piezoelectric qualities of ZnO films are characterized by their high resistivity and polycrystalline structure which is preferentially textured in perpendicular to the substrate, both of them were studied as a function of sputtering parameters. This paper deals with the formation of ZnO thin films successfully deposited onto glass substrate by sputtering. The films feature plane (0 0 2) preferential orientation. The effects of the sputtering pressure, sputtering power and sputtering in an O2+Ar gas mixture on the preferential orientation of the ZnO films are studied. The results show that a lower sputtering pressure is conducive to the formation of the (0 0 2) plane.