Effect of Doping Gd2O3 on Dielectric Properties of Metal-Dielectric Composite Materials

The doping effect of rare earth oxide Gd2O3 on BaTiO3-based metal-dielectric composite ceramic system was studied. Doping Gd2O3 could restrain the growth of grain which could make the dimension of grain small and density high. It could broaden the Curie peak of the ceramic, increase the dielectric constant at room temperature and decrease the temperature coefficient of capacity (TCC). The replacement of B sites by Gd3+ could lead to some nonferroelectric areas which could improve the dielectric strength of the metal-dielectric ceramic. The breakdown voltage could be enhanced to 6.5 kV·mm−1.