Emission of dislocations from nanovoids under combined loading

Among all directions available for dislocation emission from the surface of a cylindrical circular void, the direction of the most likely emission is determined. It is shown that this direction is different from the direction of the maximum shear stress at the surface of the void due to the applied loading. The critical stress and the direction of the dislocation emission are determined for circular nanovoids under remote uniaxial, pure shear, and arbitrary biaxial loading. The analysis includes effects of the loading orientation relative to the discrete slip plane orientation. It is shown that dislocations are emitted more readily from larger nanovoids and that wider dislocations are emitted under lower applied stress than narrow dislocations. Different mechanisms, under much lower stress, operate for growth of the micron-size voids.