Properties of InGaN/GaN quantum wells and blue light emitting diodes

We have reported the effects of growth interruption time on the optical and structural properties of high indium content InxGa1−xN/GaN (x>0.2) multilayer quantum wells (QWs). The InGaN/GaN QWs were grown on c-plane sapphire by metal organic chemical vapor deposition. The interruption was carried out by closing the group-III metal organic sources before and after the growth of the InGaN QW layers. The transmission electron microscopy (TEM) images show that with increasing interruption time, the quantum-dot-like region and well thickness decreases due to indium reevaporation or the thermal etching effect. As a result the photoluminescence (PL) peak position was blue-shifted and the intensity was reduced. The sizes and number of V-defects did not differ with the interruption time. The interruption time is not directly related to the formation of defects. The V-defect originates at threading dislocations and inversion domain boundaries due to higher misfit strain. Temperature dependent PL spectra support the results of TEM measurements. Also, the electroluminescence spectra of light-emitting diode show that dominant mechanism in InGaN/GaN QWs is a localized effect in the quantum-dot-like regions.