Author/Authors :
M. Godlewski، نويسنده , , E. Guziewicz، نويسنده , , K. Kopalko، نويسنده , , E. ?usakowska، نويسنده , , E. Dynowska، نويسنده , , M.M. Godlewski، نويسنده , , E.M. Goldys، نويسنده , , M.R. Phillips، نويسنده ,
Abstract :
We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (1 0 0). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage.
Keywords :
White light emission , ZnSe , cathodoluminescence , Atomic layer epitaxy
