Photoluminescence of silicon oxide films enriched by Si or Ge

Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.