One step towards the fabrication of a nanoscale Si-nc based laser cavity

In this paper, we report on the design of two major components of a laser architecture using Si-nc embedded in SiO2 as the optical gain medium and sub-wavelength periodic structures to form the resonant cavity. Dimensions of the structures have been matched to near-infrared wavelengths (∼850 nm) of the maximum photoluminescent emission where optical gain has been observed from Si-nc. Both the front (FM) and rear (RM) mirrors have been fabricated by the implantation of Si ions (50 keV, 2×1017 Si+/cm2) through a mask, in order to produce a Bragg reflector by optical index contrast between the implanted and the non-implanted zones. Two closely spaced Bragg reflectors are used in the FM structure to allow a narrow bandpass (partial transmission) centered at 850 nm. The implanted structures have been annealed to produce Si-nc and passivation. Scanning electron microscopy (SEM) images show that the design dimensions of the structure have been obtained. Characterization of the structures by laser excitation reveals an optical gap in both mirrors between 825 and 870 nm, as per the design parameters. A quality factor Q∼95 and a reflectivity R∼0.2 have been measured for the FM. These results support the concept that a complete Si-nc based laser cavity can be built to emit coherent light.