Characterization of AlxGa1−xAs/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

This work presents the results of the growth and characterization of AlxGa1−xAs/GaAs multilayer structures obtained in a metallic-arsenic-based-MOCVD system. The main goal is to explore the ability of the growth system to grow high quality multilayer structures like quantum wells. The use of metallic arsenic could introduce important differences in the growth process due to the absence of the hydride group V precursor (AsH3), which manifests in the electrical and optical characteristics of both GaAs and AlxGa1−xAs layers. The characterization of these epilayers and structures was performed using low-temperature photoluminescence, Hall effect measurements, X-ray diffraction, Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM).