Afterglow in bulk AlN single crystals under β-irradiation Review Article

Regularities of afterglow at room temperature and of thermoluminescence at further heating up to 673 K have been studied in bulk aluminum nitride single crystals. It has been established that after exposure to β-irradiation luminescence decay at RT may be described by superposition of two exponential components: fast (59 s) and slow (606 s) ones, caused by defects of the anion crystal sublattice ON- and VN-centers, respectively. The afterglow spectrum is shown to be characterized by the 3.43 eV band with FWHM=0.61 eV that dominates also in the thermoluminescence under study. From analysis of the TL curves in terms of the general order formalism it has been concluded that variation of the activation energy observed within the 0.46–0.85 eV range with increasing storage of the samples from 5 min to 3 days may be caused by energy distribution of traps on the basis of oxygen-related centers. For the first time the compensation effect has been found, and phenomenologically interpreted for the TL processes of the AlN single crystals. Isokinetic temperature has been estimated within the framework of empiric and non-empiric relations.