Pulsed laser deposition of Gd3O4Br:Tb3+ films and their emission properties

Gd3O4Br:Tb thin film phosphors are fabricated by pulsed laser deposition on Si (1 1 1) substrate at room temperature and their photoluminescence (PL) properties have been studied. When the films are excited by UV light, several characteristic emissions of Tb3+ are detected. When the emission of Tb3+ are monitored, a broad excitation band centered at 265 nm and two excitation lines peaked at 276 and 313 nm are found, which can be assigned to 7F6(4f8)→5d of Tb3+ excitation and to 8S7/ 2 →6 IJ and 8S7/ 2 →6PJ of Gd3+ excitation, respectively. The oxygen pressure and post-annealing temperature are changed during the films growth, and it is proved that the film deposited with 20 Pa oxygen pressure and post-annealed at 1000°C shows prominent PL brightness.