Title of article
Luminescence and defect studies of YAlO3:Dy3+, Sm3+ single crystals exposed to 100 MeV Si7+ ion beam
Author/Authors
H.B. Premkumar، نويسنده , , D.V. Sunitha، نويسنده , , Fouran Singh، نويسنده , , H. Nagabhushana، نويسنده , , S.C. Sharma، نويسنده , , B.M. Nagabhushana، نويسنده , , Guangjun Zhao، نويسنده , , Jianyu Chen، نويسنده , , R.P.S. Chakradhar، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
2679
To page
2683
Abstract
Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm3+ and Dy3+) activated YAlO3 single crystals have been induced with 100 MeV Si7+ ions with fluence of 7.81×1012 ions cm−2. Prominent IL and PL emission peaks in the range 550–725 nm in Sm3+ and 482–574 nm in Dy3+ were recorded. Variation of IL intensity in Dy3+ doped YAlO3 single crystals was studied in the fluence range 7.81×1012–11.71×1012 ions cm−2. IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2×1012 ions cm−2 on pure and doped crystals at a warming rate of 5 °C s−1 at room temperature. Pure crystals show two glow peaks at 232 (Tg1) and 328 °C (Tg2). However, in Sm3+ doped crystals three glow peaks at 278 (Tg1), 332 (Tg2) and 384 °C (Tg3) and two glow peaks at 278 (Tg1) and 331 °C (Tg2) in Dy3+ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model.
Journal title
Journal of Luminescence
Serial Year
2012
Journal title
Journal of Luminescence
Record number
1261486
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