Dependence of accumulated luminosity of thermostimulated luminescence on type of the electron–hole center distribution in a crystal

The thermostimulated luminescence (TSL) was modeled by the method of the cellular automation within the temperature range 77–400 K. The TSL modeling was performed under the initial distribution of electrons and holes on a surface of multifractal and chaotic types, differing in homogeneity, level of orderliness and value of the informational entropy. Dependence of the entropy on the temperature at which the sample is heated to, shows that at the temperature corresponding to the TSL peak, the informational entropy of the system does not change. This fact proves that the multifractal structure has a great stability factor. As it was revealed that in addition to the crystal–chemical, physical–chemical and geological factors, the structure factor, characterized by the type of the electron–hole center distribution in a crystal, exerts an influence on the thermostimulated luminescence process.