Title of article
Exciton localization due to isoelectronic substitution in ZnSTe
Author/Authors
Z.Y. Xu، نويسنده , , X.D Yang، نويسنده , , Z. Sun، نويسنده , , B.Q. Sun، نويسنده , , C. Y. Ji، نويسنده , , G.H. Li، نويسنده , , I.K. Sou، نويسنده , , W.K. Ge، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
3
From page
402
To page
404
Abstract
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe in the whole composition range from ZnS to ZnTe. In the S-rich ZnSTe photoluminescence is dominated by Te-bound excitons, while in Te-rich side, S-related bound exciton emission dominates the radiative recombination. Localization nature of IEC bound exciton emissions in both S-rich and Te-rich side ZnSTe alloys are studied in detail.
Keywords
Isoelectronic centers , ZnSTe alloys , localization , Photoluminescence
Journal title
Journal of Luminescence
Serial Year
2007
Journal title
Journal of Luminescence
Record number
1261808
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