Author/Authors :
Z.Y. Xu، نويسنده , , X.D Yang، نويسنده , , Z. Sun، نويسنده , , B.Q. Sun، نويسنده , , C. Y. Ji، نويسنده , , G.H. Li، نويسنده , , I.K. Sou، نويسنده , , W.K. Ge، نويسنده ,
Abstract :
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe in the whole composition range from ZnS to ZnTe. In the S-rich ZnSTe photoluminescence is dominated by Te-bound excitons, while in Te-rich side, S-related bound exciton emission dominates the radiative recombination. Localization nature of IEC bound exciton emissions in both S-rich and Te-rich side ZnSTe alloys are studied in detail.
Keywords :
Isoelectronic centers , ZnSTe alloys , localization , Photoluminescence
