Title of article
Research on the junction-temperature characteristic of GaN light-emitting diodes on Si substrate
Author/Authors
Fengyi Jiang، نويسنده , , Weihua Liu، نويسنده , , Youqun Li، نويسنده , , Wenqing Fang، نويسنده , , Chunlan Mo، نويسنده , , Maoxing Zhou، نويسنده , , Hechu Liu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
3
From page
693
To page
695
Abstract
Junction temperature is one of the key parameter of light emitting diodes (LEDs). The junction temperature characteristic of GaN-based blue LEDs on Si substrate was first reported. The results indicated that the junction temperature of GaN LEDs on Si substrate is lower than that of GaN LEDs on sapphire, which is attributed to the good thermal conductivity of Si substrate.
Keywords
GaN , Si substrate , LED , Junction temperature
Journal title
Journal of Luminescence
Serial Year
2007
Journal title
Journal of Luminescence
Record number
1261998
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