Author/Authors :
Changling Yan، نويسنده , , Jingchang Zhong، نويسنده , , Yingjie Zhao، نويسنده , , Yongqin Hao، نويسنده , , Te Li، نويسنده , , Yanfang Sun، نويسنده , , Chunfeng He، نويسنده , , Xiaonan Shan، نويسنده , , Guoguang Lu، نويسنده , , Chunyu Zhang، نويسنده ,
Abstract :
We design a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR), and the reflection spectrum is calculated by employing transfer matrix method. In experiment, this kind of DBR is grown on GaAs (1 0 0) substrate. From the measured reflection spectrum, the central wavelength is about 810 nm with high reflectivity, and the reflection bandwidth is about 100 nm. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs, the DBR with center wavelength at 1.3 μm is also investigated theoretically. The calculated results show that the central wavelength is about 1.3 μm, and the peak reflectivity is up to 99.5% with 30 pair.
Keywords :
Distributed Bragg reflector , Semiconductor superlattice , Vertical-cavity surface-emitting laser , Micro-cavity device
