Author/Authors :
Hui Wang، نويسنده , , Zhifeng Shi، نويسنده , , Baolin Zhang، نويسنده , , Guoguang Wu، نويسنده , , Jin Wang، نويسنده , , Yang Zhao، نويسنده , , Yan Ma، نويسنده , , Guotong Du، نويسنده , , Xin Dong، نويسنده ,
Abstract :
The n-ZnO/i-NiO/n-GaN isotype heterojunction diode was fabricated by metal organic chemical vapor deposition (MOCVD) on the n-GaN/sapphire substrate. The current–voltage (I–V) measurement showed typical rectification characteristics with a turn-on voltage of 2.5 V. An ultraviolet emission peak around 363 nm was observed from the EL spectra at room temperature. High ultraviolet light extraction efficiency was proved by a superlinear curve of the intensity ratio of ultraviolet to visible emission. The mechanism of electroluminescence has been tentatively elucidated in terms of band diagrams of the heterojunction.
Keywords :
ZNO , NiO , MOCVD , Luminescence properties