Title of article :
Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes
Author/Authors :
Hui Wang، نويسنده , , Zhifeng Shi، نويسنده , , Baolin Zhang، نويسنده , , Guoguang Wu، نويسنده , , Jin Wang، نويسنده , , Yang Zhao، نويسنده , , Yan Ma، نويسنده , , Guotong Du، نويسنده , , Xin Dong، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
4
From page :
160
To page :
163
Abstract :
The n-ZnO/i-NiO/n-GaN isotype heterojunction diode was fabricated by metal organic chemical vapor deposition (MOCVD) on the n-GaN/sapphire substrate. The current–voltage (I–V) measurement showed typical rectification characteristics with a turn-on voltage of 2.5 V. An ultraviolet emission peak around 363 nm was observed from the EL spectra at room temperature. High ultraviolet light extraction efficiency was proved by a superlinear curve of the intensity ratio of ultraviolet to visible emission. The mechanism of electroluminescence has been tentatively elucidated in terms of band diagrams of the heterojunction.
Keywords :
ZNO , NiO , MOCVD , Luminescence properties
Journal title :
Journal of Luminescence
Serial Year :
2013
Journal title :
Journal of Luminescence
Record number :
1262501
Link To Document :
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