Quantum wells under an in-plane magnetic field: Effect of the composition parameters on excited electron energy splitting

The dependence of the electronic spin-splitting energy on the composition parameters (x,y) in InxGa1−xAs–InyAl1−yAs-based quantum wells, has been calculated. InGaAs narrow gap structures, subjected to in-plane magnetic fields, have been selected because these structures have a big Landè factor. The dependence of the Landé factor both on the applied fields and composition parameters has been included for fixed well width and external electric field. Contributions from the interfaces and strain, which also depend on the composition, are included. Spin-splitting energy and density of states show a strong dependence on the above parameters.