Interference effects on the photoluminescence spectrum of GaN/InxGa1−xN single quantum well structures

Interference effects in the spectra of the III-nitride epilayers can produce ambiguities and misinterpretations. This problem has been addressed in the literature (e.g. [L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies, Solid State Commun. 115 (2000) 575]) and a few approaches are given to produce an interference function with which the interference effects can be removed. However, the calculated interference functions may provide over or underestimated corrections because of scattering in the values of the optical parameters of the materials used in the calculation. This paper first describes a model that is developed to derive an interference function. Then, it presents the fit parameters required in the calculation of the interference function that are found experimentally. The experiments compare the corrected spectrum with an interference free spectrum, which can be obtained if the geometry of the light collection is adjusted to the Brewster angle. In this way, one avoids large estimations errors, since the validation data are derived experimentally from the same material, and under the same excitation conditions. The model has been applied to correct the low-temperature, low excitation density photoluminescence measurements of a set of five GaN/InGaN single quantum well samples with different indium concentrations. The effectiveness of this proposed technique is illustrated by the so found results.