Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence

In order to observe the effect of intra-band gap excitation on the photoluminescence (PL) properties of undoped InP and iron doped InP (InP:Fe), PL measurements were performed in InP crystals with thickness of 360 μm and area of about 4×3 mm2, grown by the liquid encapsulated Czochralski (LEC) technique upon excitation with both Ar-ion laser and 980 nm light. The PL intensities for InP:Fe under 980 nm wavelength light illumination relative to no illumination increased by about 52%, 33%, and 12% for the 1.337, 1.380, and 1.416 eV peaks, respectively, at 10 K, whereas there was no illumination effect for undoped InP. This is a strong indication that Fe centers play a role as non-radiative recombination centers to decrease the PL intensity. PL experiments were performed in the spectral range of 1320–1440 meV for InP in the sample temperature range of 10–160 K. The electron and hole photoionization cross-sections at 980 nm wavelength light illumination were calculated as image and image, respectively.