Carriersʹ localization and thermal redistribution in post growth voluntarily tuned quantum dashesʹ size/composition distribution

This paper treats the impact of post growth tuned InAs/InP quantum dashesʹ (QDas) size/composition distribution on carriersʹ localization and thermal redistribution. The spread of this distribution depends on the experimental conditions used for the phosphorus ion implantation enhanced intermixing process. Atypical temperature-dependent luminescence properties have been observed and found to be strongly dependent on the amount of QDas size/composition dispersion. The experimental results have been reproduced by a model that takes into account the width of the QDas localized states distribution and consequent thermally induced carriersʹ redistribution. This model gives critical temperature values marking the beginning and the end of carriers delocalization and thermal transfer processes via an intermixing induced carrierʹs transfer channel located below the wetting layer states.