Title of article
Dependence of discharge path on breakdown characteristic of tunneling magnetroresistive read heads
Author/Authors
N. Jutong، نويسنده , , D. Sompongse، نويسنده , , A. Siritaratiwat، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
5
From page
503
To page
507
Abstract
The dependence of discharge path on the breakdown of a TMR head was performed by using human body model in 4 cases; R+ → R− (1st), R− → R+ (2nd), R+ → ground (3rd) and R− → ground (4th). It is seen by using the TMR read head equivalent circuit that, at first, the 1st and 3rd, and the 2nd and 4th, cases present an intrinsic and extrinsic breakdown, respectively. A potential difference across the substrate is thought to cause a different breakdown mechanism. Dependence of voltage polarity across the TMR sensor on asymmetry parameter is also discussed.
Keywords
Electrostaticdischarge , Breakdowncharacteristic , Tunnelingmagnetoresistivereadhead
Journal title
JOURNAL OF ELECTROSTATICS
Serial Year
2010
Journal title
JOURNAL OF ELECTROSTATICS
Record number
1265240
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