The dielectric properties and optical propagation loss of c-axis oriented ZnO thin films deposited by sol–gel process

The c-axis oriented ZnO thin films were prepared on various substrates by sol–gel processes. The stability of solution was examined through solvent and stabilizer. The c-axis orientation and grain size of films were increased with increasing of heat treatment temperature. The optical propogation losses of ZnO films deposited SiO2/Si(111) substrates were measured using end-coupling method. The losses result in the scattering of the interface of ZnO/SiO2, and the ZnO grain. Dielectric constant and resistivity of thin films deposited on Pt/SiO2/Si(111) substrates are, respectively, in the range of 7–13 and 1.7×104∼9.8×105Ω cm.