Title of article :
Chemical solution deposition of conductive SrRuO3 thin film on Si substrate
Author/Authors :
Hisao Suzuki، نويسنده , , Yuki Miwa، نويسنده , , Hidetoshi Miyazaki، نويسنده , , Minoru Takahashi، نويسنده , , Toshitaka Ota، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
1357
To page :
1360
Abstract :
The conductive metal oxide of SrRuO3 (SRO) thin films were deposited on Si(1 0 0) substrate by spin-coating with a chemical solution deposition (CSD). A stable precursor solution could be prepared from RuCl3·2H2O as a Ru source and Sr or SrCl2 as a Sr source in 2-methoxyethanol. Highly (2 0 0)-oriented SRO films with a perovskite structure were obtained by the annealing at above 600 °C. As a result, relatively good SRO thin films could be deposited from a precursor solution of Sr and RuCl3·2H2O by annealing at 700 °C, showing a low resistivity of 1.1×10−3 Ω cm.
Keywords :
D. Perovskite , chemical solution deposition , SrRuO3 , Oxide electrode , Thin film
Journal title :
Ceramics International
Serial Year :
2004
Journal title :
Ceramics International
Record number :
1268860
Link To Document :
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