Effect of Ta substitution on microstructure and electrical properties of 0.80Pb(Mg1/3Nb2/3)O3–0.20PbTiO3 ceramics

The influence on microstructure and electrical properties of Ta-substituted 0.80Pb(Mg1/3Nb2/3)O3–0.20PbTiO3 (0.80PMN–0.20PT) ceramics has been investigated. The grain size decreases with Ta concentration increases. The sample with 10 at.% Ta substitution has dense structure and better dielectric and piezoelectric properties, with density ∼7.7 g/cm3, εm ∼45,000, kp ∼34% and d33 ∼158 pC/N. Less or more Ta doping in 0.80PMN–0.20PT ceramics is all harmful to dielectric and piezoelectric properties.