The effect of pyrolyzing temperature to the microstructure of PZT/PT multilayer thin films

By sol–gel method, ferroelectric Pb(Zr0.5,Ti0.5)O3/PbTiO3(PZT/PT) multilayer thin films are deposited on Pt/Ti/SiO2/Si substrates. The effects of different pyrolysis on the crystalline structure are investigated using X-ray diffraction (XRD). Dielectric properties and leakage current characteristic are determined by HP4284A LCR meter and Keithley 6517A. After annealing at 600 °C, the thickness of one layer is about 60–70 nm. It shows that the pyrolysis temperature can affect the dielectric properties of PZT/PT multilayer thin films dramatically. At 100 kHz, the dielectric constant of 255, dielectric loss of 0.0165 is obtained for the PZT/PT multilayer thin films pyrolyzed at 500 °C. By contract, dielectric constant of 126 and 118, dielectric loss of 0.0210 and 0.0235 are obtained for the films pyrolyzed at 400 and 300 °C. The films polyrized at 500 °C exhibit the lowest leakage current. Experimental results showed the PZT/PT multilayer thin film pyrolyzed at 500 °C is a good candidate material for infrared (IR) detectors.