The dielectrical properties of (B,Si) doped (Ba,Sr)TiO3 thin films fabricated by sol–gel technique

The dielectrical properties (B,Si) doped barium strontium titanate (BSTS) thin films were investigated. Thin films of BSTS were fabricated on Pt/Ti/SiO2/Si substrate by spin coating. The multicomponent precursor solutions were prepared using sol–gel method. The relative dielectric constant of a 400 nm BSTS thin film fired at 700 °C decreased with the increasing content of tributyl borate (B) and TEOS (Si). The leakage current of the BST films decreased as the content of (B,Si) dopant was low (≤10 mol%), while it increased as the content of (B,Si) dopant was high (≥15 mol%).