Si field emitter arrays coated with thin ferroelectric films

This paper demonstrates novel approach on Si field emitter arrays (FEAs) coated with thin ferroelectric films for vacuum microelectronic applications, which exhibit enhanced electron emission behaviors. The films were deposited using sol–gel and sputtering process, respectively. In sol–gel approach, the emission behavior is highly correlated to the crystallinity of (Ba,Sr)TiO3 (BST) layer. The interfacial reaction between Si and BST film would deteriorate the crystallinity of the films, and in turn impede the electron emission from silicon tips. The film thickness and the dopants also affect the emission behaviors significantly. In sputtering process, the nitrogen-incorporated SrTiO3 (STO) films are deposited with eliminated interfacial due to relatively lower processing temperature. The enhanced emission characteristics are highly correlated with nitrogen-incorporation and film thickness. These encouraging results have offered great promise for the application of ferroelectric films in field emission devices.