Metal-organic chemical liquid deposited (1 1 0)-preferred LaNiO3 buffer layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric films

Conductive perovskite lanthanum nickelate LaNiO3 (LNO) thin films were fabricated on SiO2/Si substrates through metal-organic chemical liquid deposition method. The effect of annealing temperature on the orientation and sheet resistance of the LNO films were investigated. XRD patterns showed that the LNO films deposited on SiO2/Si substrates exhibited preferred-(1 1 0) orientation. The lowest sheet resistance of the LNO thin films, 250 Ω/□ was obtained after being annealed at 650 °C for 1 h. Subsequently, Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 (PLZST) antiferroelectric thin films were prepared on the LaNiO3 buffered SiO2/Si substrates via sol–gel process. And the crystallinity, microstructure and electric properties of the PLZST thin films were studied in details.