A new treatment for kinetics of oxidation of silicon carbide

In this paper the oxidation kinetics of SiC has been studied as per both experimental and theoretical aspects based on current literatures, from which the shortcoming of theory has been discussed. A new model has been introduced that can express the oxidation weight gain as a function of temperature, oxygen partial pressure and the size of materials explicitly. Two examples, chemical vapor deposition (CVD) SiC pellet and ZrB2–SiC pellet, have been selected to test our new model and the calculated results show that our new model can fit both isothermal and non-isothermal data very well. Therefore, it is expected that this new model could be used to predict the oxidation behavior of SiC materials based on limited experimental information.