Optimization of the sputtering process parameters of GZO films using the Grey–Taguchi method

This paper examines the optimization of the process parameters of GZO films deposited on polyethylene terephthalate substrates by R.F. magnetron sputtering using the Taguchi method, aiming to obtain highly transparent and conductive films. The influences of the various sputtering factors (R.F. power, sputtering pressure, deposition time, substrate temperature and post-annealing temperature) on electrical resistivity and structural, morphological and optical transmittance of GZO films are analyzed. The electrical resistivity and the optical transmittance of GZO films were improved by post-annealing the substrate during the deposition process. Experimental results indicate the optimal process parameters in GZO films deposited on polyethylene terephthalate substrates can be determined effectively. The electrical resistivity of GZO films is decreased from 1.194 × 10−3 Ω cm to 8.627 × 10−4 Ω cm and the optical transmittance is increased from 86.148% to 90%, leading to multiple performance characteristics in deposition qualities through the Grey–Taguchi method.