Properties of RF magnetron sputtered 0.95 (Na0.5Bi0.5)TiO3–0.05 BaTiO3 thin films

0.95 (Na0.5Bi0.5)TiO3–0.05 BaTiO3 + 2 wt% Bi2O3 (NBT–BT3) ceramic was used as a target and NBT–BT3 thin films were deposited at room temperature by changing the RF power from 75 W to 150 W. The thickness of the NBT–BT3 thin films increased from 203 to 478 nm as the RF power increased from 75 W to 150 W. At 75 W RF power, the deposited NBT–BT3 thin films displayed defective surfaces, whereas at RF power ≧ 100 W, the NBT–BT3 thin films displayed smooth surfaces. The grain sizes also increased with increasing RF power. In addition, the remanent polarization and saturation polarization increased with increasing RF power. The coercive field first increased, reached a maximum at 100 W, then decreased with increasing RF power.